Curriculum Vitae

DATE/PLACE OF BIRTH : February 16, 1957 / Arahova-Viotia, Geece.

FAMILY STATE: Married, Four (4) children.

PERMANENT ADDRESS: Work: National Technical University of Athens (NTUA)

                         School of Applied Mathematical and Physical Sciences,
                         Physics Department
                         157 80 Zografou, Athens. GREECE
                         tel: +30-210772-3044
                         fax: +30-210772-2928
                         e-mail: yraptis@mail.ntua.gr
                   Home: 30-32 Bouboulinas street
                         153 41 Aghia Paraskevi, GREECE.
                         tel: +30-2106535365

EDUCATION :

      Diploma in Physics     1981, University of Athens

      Ph.D. in Physics       1988, National Technical University of Athens

FIELD OF SPECIALIZATION: Solid State Physics, Optical Spectroscopy

SOCIETIES:

1981 -        :                       Greek Physical Society

1989 -        :                       American Physical Society

POSITIONS HELD :

1981-1982 :                       Graduate student, Nuclear  Research Center “Democritos”

                                          (Scholarship, Greek Comm. of Atomic Energy), GREECE.

1982-1986 :                       Research Assistant, Physics Department

                                          National Technical University, GREECE

1986-1987 :                       Military Service, Research Assistant, National Defence

                                          Research Center, Amygdalesa Attikis. GREECE.

1987-1988 :                       Research Assistant, Physics Department, NTUA, GR

1989-1993 :                       Lecturer, Physics Department, NTUA, GR

1993-2003 :                       Assistant Professor, Physics Department, NTUA, GR

2003-2016 :                       Associate Professor, Physics Department, NTUA, GR

2016-        :                        Full Professor, Physics Department, NTUA, GR

SHORT TIME APPOINTMENTS:

    1985 June :                        Visiting Researcher, Univ. Paris VI (Pierre et Marie Curie)
    1989 January-February :   Paris, FRANCE.
    1991 April - July :               Visiting Scientist, Max-Planck Institute Stuttgart, GERMANY.
    1991 August :                     Visiting Scientist, Tech. Univ. of Berlin, Berlin, GERMANY
    1992 2 weeks (October)                <<                    <<                    <<
    1993 2 weeks (Aug.-Sept.)           <<                    <<                    <<
    1995 June-August                         <<                    University of Barcelona, SPAIN

REVIEWER:

  •     Journal of Applied Physics
  •     Journal of Crystal Growth
  •     Journal of Micromechanics and Microengineering
  •     Journal of Physics: Condensed Matter
  •     Journal of Physics D: Applied Physics
  •     Journal of Raman Spectroscopy
  •     Journal de Physique IV
  •     Material Science and Engineering B - Solid State Materials for Adv. Technology
  •     Nanotechnology
  •     Physical Review B
  •     Semiconductors Science and Technology
  •     Physical Review Letters


Publications:

1. Effects of temperature gradients on the first-order Raman spectrum of Si. J. .Raptis, E. Liarokapis, and E. Anastassakis - Appl. Phys. Lett.  44, 125-127 (1984).

2. Angular dispersion of "backward" Raman scattering: Weakly absorbing cubic materials (Si). E.Anastassakis and Y.S.Raptis-J.Appl.Phys. 57, 920-928 (1985)

3. Temperature rise induced by a cw laser beam revisited. E.Liarokapis and Y.S.Raptis - J. Appl. Phys. 57, 5123-5126 (1985).

4. Raman and Infrared Spectra of Tellurium Sub-Bromide (Te2Br). E. Anastassakis, J. S. Raptis, and W. Richter - phys. stat. sol.(b) 130, 161-168 (1985).

5. Angular dispersion of "backward" Raman scattering: Absorbing cubic materials (Ge).  A. Anastassiadou, Y .S. Raptis, and E. Anastassakis - J. Appl. Phys.59, 627-631 (1986).

6. Angular dispersion of "backward" Raman scattering: Absorbing III-V semiconductors (GaAs). A.Anastassiadou,Y.S.Raptis,and E.Anastassakis - J. Appl. Phys. 60, 2924-2931 (1986).

7. Raman study of SrF2 under uniaxial Stress. A. D. Papadopoulos, Y. S. Raptis and E. Anastassakis - Solid State Communications, 58, 645-648 (1986).

8. Anharmonic effects in Mg2X (X=Si,Ge,Sn) compounds studied by Raman spectroscopny. Y S. Raptis, G. A. Kourouklis, E. Anastassakis, E. Haro-Poniatowski and M.Balkanski, - J. Physique, 48, 239-245 (1987).

9. Raman and infrared phonon piezospectroscopy in InP. E. Anastassakis and Y.S. Raptis, M. Hunermann and W. Richter, and M. Cardona - Phys. Rev. B38, 7702-7709 (1988).

10. Tempereture dependence of long-wavelength optical phonons in AlSb. Y.S. Raptis and E. Anastassakis - Solid State Commun. 76, 335-338(1990).

11. Raman spectroscopic study of PrS. E. Anastassakis and Y.S Raptis - Festchrift in Honor of R.C. Leite, Eds. M. Balkanski, C.E.T.G. da Silva, M. Worlock, World Scientific, Singapore 1991, pp. 77-82.

12. Short-range order and microstructure in hydrogenated amorphous silicon. P. Danesh, B. Pantchev, I. Savatinova, E. Liarokapis and Y.S. Raptis - J. Appl. Phys. 69, 7656-7659 (1991).

13. Vibrational modes, optical excitations, and phase transition of solid C60 at high pressures. D.W. Snoke, Y.S. Raptis, and K. Syassen - Phys. Rev. B45, 14419-14422 (1992).

14. Arsenic passivation of MBE grown GaAs(100):structural and electronic properties of the decapped surfaces. U. Resch, N. Esser, Y.S. Raptis, W. Richter, J. Wasserfall, A. Foster and D.I. Westwood - Surface Science 269/270, 797-803 (1992).

15. Pressure dependence of zone-boundary phonons of AlSb. Y. S. Raptis and K. Syassen - High Pressure Research, 9/10, 31-35 (1992).

16. Raman study of C60/C70 under pressure. Y. S. Raptis, D.W. Snoke, K. Syassen, S. Roth, P. Bernier and A. Zahab - High Pressure Research, 9/10, 41-46 (1992).

17. Second-order Raman scattering in AlSb. Y.S. Raptis, E. Anastassakis and G. Kanellis - Phys. Rev. B, 46, 15801-15811 (1992).

18. Stabilized Cubic Zirconia: A Raman Study under Uniaxial Stress.     Jinguang Cai,Y. S. Raptis and E. Anastassakis - Appl. Phys. Letters, 62, 2781 (1993).

19. XRD and Raman studies of low-temperature-grown GaAs epilayers. M. Calamiotou, Y.S. Raptis and E. Anastassakis, M. Lagadas and Z. Hatzopoulos - Solid State Commun, 87, 563 (1993).

20. Temperature dependence of Raman scattering in Stabilized Cubic Zirconia. J. Cai, C. Raptis, Y.S. Raptis, E. Anastassakis - Phys. Rev. B 51, 201-210 (1995).

21. Folded phonons from lateral periodicity in (311) GaAs/AlAs corrugated superlattices. Z.V. Popovic, M.B. Vukmirovic, and Y.S. Raptis, E. Anastassakis, R. Notzel, K. Ploog - Phys. Rev. B 52 (8), 5789-94 (1995).

22. Optical Studies of ZnSe-Zns/GaAs(100) Single Quantum Wells grown by Photo-assisted Vapur Phase Epiraxy. V.V. Tishchenko, Y.S. Raptis, and E. Anasstassakis, N.V. Bondar - Solid State Communications, 96 (10), 793-98 (1995).

23. Interference patterns under normal incidence in birefringent, optically active plane parallel plates, T.D. Wen, Y.S. Raptis, E. Anastassakis, I.J. Lalov, A.I. Miteva - J. Phys. D : Appl. Phys., 28, 2128-34 (1995).

24. Surface-related phonon mode in porous GaP. I.M. Tiginyanu and V.V. Ursaki, V.A. Karavanskii and V.N. Sokolov, and Y.S. Raptis and E. Anastassakis - Solid State Communications, 97, 675-678 (1996).

25. Raman scattering study of ZnInGaS4 and CdInGaS4 under hydrostatic pressure. E. Anastassakis, Y.S. Raptis, Sh. Ando, T. Irie, V.V. Ursaki, I.M. Tiginyanu, S.I. Radautsan, I. I. Burlakov - Cryst. Res. Technol., 31, 365-368 (1996).

26. Pressure induced phase transition in MgInGaS4. I.M. Tiginyanu, Y.S. Raptis, V.V. Ursaki, E. Anastassakis, I.I. Burlakov - Cryst. Res. Technol., 31, 777-780 (1996).

27. Two-wave and induced three-wave mixing in thin holograms. P.M. Petrov, V.M. Petrov, Y.S. Raptis, L.P. Xu, E. Anastassakis - J. Appl. Phys., 79, 2846-2852 (1996).

28. Interference patterns under oblique incidence in birefringent optically active plane-parallel plates. A.I. Miteva, I.J. Lalov, T. Wen, Y.S. Raptis and E. Anastassakis - J. Phys. D : Appl. Phys. 29, 2705-2713 (1996).

29. Order-disorder phase transition in CdAl2S4 under hydrostatic pressure. I. I. Burlakov, Y. S. Raptis, V.V. Ursaki, E. Anastassakis and I.M. Tiginyanu, - Solid State Commun., 101, 377 - (1997).

30. Strain effects on InSb phonons in bulk and superlattice layers. M. Siakavellas, Y. S. Raptis, and E. Anastassakis, D. J. Lockwood - J. Appl. Phys., 82, 6235-6239 (1997).

31. Pressure Induced Phase Transitions in Spinel and Wurtzite Phases of ZnAl2S4 Compound. V. V. Ursaki, I. I. Burlakov, I. M. Tiginyanu, Y. S. Raptis, E. Anastassakis, I. Aksenov and K. Sato - Jpn. J. Appl. Phys., 37, 135-140 (1998).

32. High-pressure Raman scattering study of germanium diselenide. Z. V. Popovic, Z. Jaksic, Y. S. Raptis and E. Anastassakis, - Phys. Rev. B, 57(6), 3418-3422 (1998).

33. Porous Silicon of Variable Porosity under high Hydrostatic Pressure : Raman and Photoluminescence Studies. D. Papadimitriou, Y. S. Raptis, A. G. Nassiopoulou and G. Kaltsas - phys. stat. sol.(a) 165, 43-48 (1998).

34. Pressure-induced amorphization of germanium diselenide. Z. V. Popovic, Y. S. Raptis, E. Anastassakis, Z. Jaksic - Journal of Non-Crystalline Solids, 227-230, 794-798 (1998).

35. Optical phonons in spin-Peierls compound NaV2O5. Z. V. Popovic, M. J. Konstantinovic, R. Gajic, V. Popov, Y. S. Raptis, A. N. Vasilef, M. Isobe and Y. Ueda - J. Phys. : Condens. Matter 10, L513-L519 (1998).

36. High-pressure studies of photoluminescence in porous silicon, D. Papadimitriou, Y. S. Raptis, A. G. Nassiopoulou, Phys. Rev. B 58, 14089-14093 (1998).

37. Phase transitions in defect chalcopyrite compounds under hydrostatic pressure. V. V. Ursaki, I. I. Burlakov, I. M. Tiginyanu, Y. S. Raptis, E. Anastassakis, A. Anedda, Phys. Rev. B 59, 257-268 (1999).

38. Temperature dependence of Raman scattering and anharmonicity study of MgF2. A. Perakis, E. Sarantopoulou, Y. S. Raptis and C. Raptis, Phys. Rev. B 59, 775-782 (1999).

39. Raman Modes in Porous GaP under Hydrostatic Pressure,, I. M. Tiginyanu, V. V. Ursaki, Y. S. Raptis, V. Stergiou, E. Anastassakis, H. L. Hartnagel, A. Vogt, B. Prevot, C. Schwab, phys. stat. sol. (b) 211, 281-286 (1999).

40. Pressure and temperature-dependent Raman study of YLiF4, E. Sarantopoulou, Y. S. Raptis, E. Zouboulis, and C. Raptis, Phys. Rev. B 59, 4154-4162 (1999).

41. Lattice vibrations in spin-Peierls compound NaV2O5. Z. V. Popovic, M. J. Konstantinovic, R. Gajic, V. Popov, Y. S. Raptis, A. N. Vasilef, M. Isobe and Y. Ueda, Solid State Commun. 110, 381-386 (1999).

42. Parameters influencing the fratness and stability of capasitive pressure sensors fabricated with wafer bonding, D. Goustouridis, D. Tsoukalas, P. Normand, A. G. Kontos, Y. Raptis, E. Anastassakis, Sensors and Actuators A-Physical, 76, 403-408 (1999).

43. High-pressure raman study of SnGeS3, V.C.Stergiou, Y.S.Raptis, Z.V.Popovic, E.Anastassakis, High Pressure Research, 18, 189-194 (2000).

44. Phonon deformation potentials of CdTe, V. C. Stergiou, Y. S. Raptis, E. Sarantopoulou, E. Anastassakis, N. T. Pelekanos, A. Arnoult, S. Tatarenko, K. Saminadayar, High Pressure Research, 18, 101-107 (2000).

45. Raman Study of Elastically strained Bulk and Layered Structures Based on CdTe, V. C. Stergiou, Y. S. Raptis, E. Anastassakis, N. T. Pelekanos, A. Nahmani, and J. Cibert, phys. stat. sol. (b), 223, 237 (2001).

46. Vibrational Properties of SnGeS3 under High Pressure, K. Inoue, V. Stergiou, Y. S. Raptis and Z. V. Popovic, J. Phys. Soc. Japan, 70, 3901-3907 (2001).

47. Influence of Ge implantation on the mechanical properties of polycrystalline silicon microstructures, S. Polymenakos, V. C. Stergiou, A. G. Kontos, C. Tsamis, Y. S. Raptis, D. Tsoukalas, J. Micromechanics and Microengineering, 12, 450-457, (2002).

48. High-pressure Raman study of CaV2O5, Z. V. Popovic, V. Stergiou, Y. S. Raptis, M. J. Konstantinovic, M. Isobe, Y. Ueda, V. V. Moshchalkov, J. Phys.: Condensed Matter, 14, L583-L589, (2002)

49. Epitaxy and structural characterization of ZnSeTe Layers grown on InP substrates, A. G. Kontos, Y. S. Raptis, M. Strassburg, U. W. Pohl, J. of Crystal Growth, 247, 17-22 (2003)

50. Growth and p-type doping of ZnSeTe on InP, M. Strassburg, M. Strassburg, O. Schulz, U. W. Pohl, A. Hoffmann, D. Bimberg, A.G. Kontos, Y. S. Raptis, J. Cryst. Growth, 248, 50-55 (2003).

51. Spectroscopic study of Ce- and Cr-doped LiSrAlF6 crystals, A. G. Kontos, G. Tsaknakis, Y.S. Raptis, and A. Papayannis, E. Landulfo, S. L. Baldochi, E. Barbosa, and N. D. Vieira, Junior, J. Appl. Phys., 93(5), 2979, 2803 (2003).

52. Raman study of nitrogen-doped ZnSSe/GaAs epilayers, A. G. Kontos, Y. S. Raptis, M. Strassburg, U. W. Pohl, D. Bimberg, Thin Solid Films, 428, 185-189 (2003).

53. Piezoelectric effect on the optical phonon modes of strained cubic semoconductors: Case of CdTe quantum wells, V. C. Stergiou, N. T. Pelekanos and Y. S. Raptis, Phys. Rev. B, 67, 165304-(1-15), (2003).

54. Compositional dependence of Raman scattering and photoluminescence emission in CuxGaySe2 thin films, C. Xue, D. Papadimitriou, Y. S. Raptis, N. Esser, W. Richter, S. Siebentritt, M. C. Lux-Steiner, J. Appl. Phys., 94, 4341-4347, (2003).

55. Micro-Raman Study of Orientation Effects of CuxSe-Crystallites on Cu-rich CuGaSe2 Thin Films, C. Xue, D. Papadimitriou, Y. S. Raptis, W. Richter, N. Esser, S. Siebentritt, M. C. Lux-Steiner, J. Appl. Phys., 96, 1963-1966, (2004).

56. Properties of polycrystalline silicon films obtained by rapid thermal processing for micromechanical sensors, D. Girginoudi, A. Mitsinakis, M. Kotsani, N. Georgoulas, A. Thanailakis, A. G. Kontos, V. C. Stergiou, Y. S. Raptis, J. Non-Crystalline Solids, 343, 54-60 (2004).

57. Micro-Raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures, A. G. Kontos, Y. S. Raptis, N. T. Pelekanos, A. Georgakilas, E. Bellet-Amalric, and D. Jalabert, Phys. Rev. B, 72, 155336 (2005).

58. Raman scattering study of b-Sr0.33V2O5 in charge disordered and ordered phase, Z. V. Popovic, A. G. Kontos, Y. S. Raptis, M. Isobe and Y. Ueda, J. Phys.: Condens. Matter, 18, 7779-7787 (2006).

59. Raman study of b-Sr0.33V2O5 micro-crystals under high pressure, A. G. Kontos, D. Lampakis, Z. V. Popovic, Y. S. Raptis, E. Liarokapis, M. Isobe and Y. Ueda, phys. stat. sol (b) 244, 362-367 (2007).

60. High pressure Raman study of DyPO4 at room and low temperatures, A. G. Kontos, E. Stavrou, V. Malamos, Y. S. Raptis and C. Raptis, phys. stat. sol (b) 244, 386-391 (2007).

61. Laser annealing of Al implanted Silicon Carbide: Structural and Optical Characterization, C. Boutopoulos, P. Terzis, I. Zergioti, A.G. Kontos, K. Zekentes, K. Giannakopoulos, Y.S. Raptis, Applied Surface Science, 253, 7912-7916 (2007).

62. In situ micro- and macro-Raman investigations of the redox couple behaviour in DSSCS, A. G. Kontos, T. Stergiopoulos, G. Tsiminis, Y. S. Raptis, P. Falaras, Inorg. Chim. Acta, 361, 761-768 (2008).

63. Nitrogen modified nanostructured titania: electronic, structural and visible-light photocatalytic properties, A. I. Kontos, A. G. Kontos, Y. S. Raptis and P. Falaras, phys. stat. sol. (Rap. Res. Let.) 2, 83-85 (2008).

64. Anharmonic effects and Faust-Henry coefficient of CdTe in the vicinity of the energy gap, V. C. Stergiou, A. G. Kontos, Y. S. Raptis, Phys. Rev. B 77, 235201 (2008).

65. Raman study of zircon-structured RPO4 (R = Y, Tb, Er, Tm) phosphates at high pressures, E. Stavrou, A. Tatsi, E. Salpea, Y. C. Boulmetis, A. G. Kontos, Y. S. Raptis, C. Raptis, J. Phys.: Conf. Series 121, 42016-42021 (2008).

66. Raman study of tetragonal TbPO4 and observation of a first-order phase transition at high pressure, A. Tatsi, E. Stavrou, Y. C. Boulmetis, A. G. Kontos, Y. S. Raptis and C. Raptis, J. Phys.: Condens. Matter 20, 425216 (2008).

67. Nanostructured titania films sensitized by quantum dot chalcogenides, Kontos A. G., Likodimos V., Vassalou E., Kapogianni I., Raptis Y.S., Raptis C., Falaras P., Nanosclale Research Letters, 6 (1), X1, 2011.

68. Nanoparticle strain sensor  (Conference Paper), Tannel J. L., Mousadakos D., Broutas P., Chatzandroulis S., Raptis Y.S., Tsoukalas D., Procedia Engineering, 25, 635-638 (2011) [25th Eurosensors Conference; Athens; Greece; 4 September 2011 through 7 September 2011; Code 88600]

69. Size control of Ag nanoparticles for SERS sensing applications, (Conference Paper), Photopoulos P., Boukos N., Panagopoulou M., Meintanis N., Pantiskos N., Raptis Y., Tsoykalas D., Procedia Engineering, 25, 280-283, (2011) [25th Eurosensors Conference; Athens; Greece; 4 September 2011 through 7 September 2011; Code 88600]

70. Raman enhancement of rhodamine adsorbed on Ag nanoparticles self-assembled into nanowire-like arrays  (Article), Panagopoulou M., Pantiskos N., Photopoulos P., Tang J., Tsoukalas D., Raptis Y.S., Nanoscale Research Letters, 6, 1-22, (2011)

71. Electrical conductivity, photoconductivity and gas sensitivity of Ge-Se-Te thin films, (Conference Paper), Nesheva D., Levi Z., Raptis Y.S., Raptis C., Petkov K., Vassiliev V., Journal of Physics: Conference Series, 398(1), Article number 012058, (2012) [17th International School on Condensed Matter Physics: Open Problems in Condensed Matter Physics, Biomedical Physics and Their Applications, ISCMP 2012; Varna; Bulgaria; 2 September 2012 through 7 September 2012; Code 95436]

72. Electronic band structure imaging of three layer twisted graphene on single crystal Cu(111), (Article), Marquez Velasco J., Kelaidis N., Xenogiannakopoulou E., Raptis Y. S., Tsoutsou D., Tsipas P., Speliotis Th., Pilatos G., Likodimos V., Falaras P., Dimoulas A., Applied Physics Letters, 103(21), Art.num. 213108 (2013)

73. Laser annealing and simulation of amorphous silicon thin films for solar cell applications, (Conference Paper), Theodorakos I., Raptis Y.S., Vamvakas V., Tsoukalas D., Zergioti I., Proceedings of SPIE, Vol. 8967, 2014, Article number 89670T, [Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX; San Francisco, CA; United States; 3 February 2014 through 6 February 2014; Code 105120]

74.  A study on the pulsed laser printing of liquid-phase exfoliated graphene for organic electronics, (Article), Papazoglou, S., Raptis Y.S., Chatzandroulis S., Zergioti I., Applied Physics A: Materials Science and Processing, 117(1), 301-306 (2014)

75. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications, Theodorakos I., Zergioti I., Vamvakas V., Tsoukalas, D.,  Raptis Y. S., Journal of Applied Physics, 115(4), Art. Num. 043108-1(-9), (2014)

76. Reducing the layer number of AB stacked multilayer graphene grown on nickel by annealing at low temperature, Velasco, J. Marquez, Giamini, S. A., Kelaidis, N., Tsipas, P., Tsoutsou, D., Kordas, G., Raptis, Y. S., Boukos, N., Dimoulas, A., Nanotechnology, 26(40), Art. Nu. 405603, (2015).

77. The effect of buffer layer on the thermochromic properties of undoped radio frequency sputtered VO2 thin films, Panagopoulou M., Gagaoudakis E., Aperathitis E., Michail I., Kiriakidis G., Tsoukalas D., Raptis Y.S., Thin Solid Films, (2015), doi:10.1016/j.tsf.2015.06.010

78. Effect of O2 flow rate on the thermochromic performance of VO2 coatings grown by atmospheric pressure CVD  (Article), Louloudakis D., Vernardou D., Spanakis E., Dokianakis S., Panagopoulou M., Raptis G., Aperathitis E., Kiriakidis G., Katsarakis N., Koudoumas E., Physica Status Solidi (C) Current Topics in Solid State Physics, 12(7), 856-860 (2015)

 79. Magnetic manipulation of superparamagnetic nanoparticles in a microfluidic system for drug delivery applications, L. Agiotis, I. Theodorakos, S. Samothrakitis, S. Papazoglou, I. Zergioti, Y.S. Raptis, Journal of Magnetism and Magnetic Materials (accepted, to appear 2016)

International Conferences

1. Remarks on the angular distribution of light scattering from absorbing solid surfaces. E.Anastassakis, A.Anastassiadou and Y.Raptis, XVII European Congress on Molecular Spectroscopy, Madrid, 1985.

2. Raman study of AlSb. Y.S. Raptis and E. Anastassakis, 3rd Intern. Conf. on Phonon Physics, and 6th Intern. Conf. on Phonon Scattering in Condenced Matter, Heidelberg 1989.

3. Second-order Raman scattering near the indirect gap of AlSb. Yannis Raptis and Evangelos Anastassakis, 20th Intern. Conf. on the Physics of Semicond., Thessaloniki 1990.

4. Pressure dependence of zone-boundary phonons of AlSb. Yiannis S. Raptis and K. Syassen, XXIX Annual Scientific Meeting of the Europ. High Press. Research Group, Thessaloniki 1991.

5. Raman study of C/Cunder pressure. Y.S. Raptis, D.W. Snoke, K. Syassen, S. Roth, P. Bernier and A. Zahab, XXIX Annual Scientific Meeting of the Europ. High Press. Research Group, Thessaloniki 1991.

6. Arsenic passivation of MBE grown GaAs(100): Structural and Electronic properties of the decapped surfaces. U. Resch, N. Esser, Y.S. Raptis, W. Richter, J. Wasserfall, A. Forster and D.I. Westwood, 12th European Conf. of Surface Science, 9-12 September 1991. Stickholm, Sweden.

7. XRD and Raman characterization of GaAs buffer layers grown on SI-GaAs substrates at reduced temperatures. M. Calamiotou, Y.S. Raptis, M. Lagadas, Z. Hatzopoulos and E. Anastassakis, 1st Europ. Symp. on X-ray Topogr. and high resolutiïn diffraction, Marseille 1992.

8. Stabilized Cubic Zirconia : A Raman Study under Uniaxial Stress. J. Cai, Y.S. Raptis and E. Anastassakis, 13th Gener. Conference of the Condenced Matter Division of the Europ. Phys. Society, Regensburg 1993.

9. Raman study of LiYF, under variable pressure and temperature: observation of a pressure induced phase transition. C. Raptis and  Y.S. Raptis, 13th Gener. Conference of the Condenced Matter Division of the Europ. Phys. Society, Regensburg 1993.

10. Growth mode and interface formation of In on GaAs(001) - (2x4). U.Resch, N. Blick, Y. S. Raptis, N. Esser, Th. Werningaus, U. Rossow,  W. Richter, 4th International Conference on the Formation of Semiconductor Interfaces, 14-18 June 1993, Julich, Germany.

11. High pressure Raman study of the superionic glass xAgI(1-x)AgMoO. Y.S. Raptis, C. Raptis, E. Kamitsos, G, Chryssikos, I. Kapoutsis, 14th General Conference of the Condenced Matter Division of the European Physical Society, Madrid 1994.

12. Optical studies of GaSe, under variable pressure and temperature. J.Cai, T. Wen, Y.S. Raptis, E. Anastassakis, M. v.d. Emde, Á. Markl, A. Krost, W. Richter, D.R.T. Zahn, 14th General Conference of the Condenced Matter Division of the European Physical Society, Madrid 1994.

13. Luminescence from Silicon Nanostructures fabricated by using conventional Lithographic and Reactive Ion Etching techniques. A.G. Nassiopoulos, S. Grigoropoulos, A. Travlos, S. Ladas, S. Kennou, I. Raptis, D. Papadimitriou, 187th General Meeting of the Electrochemical Society, U.S.A. 1995.

14. Optical studies of ZnSe-ZnS/GaAs(100) Single Quantum Well, V.V. Tishchenko, M.S. Brodin, Y.S. Raptis and E. Anastassakis, 7th International Conference on II-VI Compounds and Devices, Edinburg, 1995

15. Pressure induced phase transition in crystalline ZnAl2S4 ,V.V. Ursaki, Y.S. Raptis, I.M. Tiginyanu, E. Anastassakis, I.I. Burlakov, N.A. Moldovyan, 10th International Conference on Ternary and Multinary Compounds, Stuttgart 1995.

16. Study of elastically strained porous silicon for potential use in micro-IR-sensors. D. Papadimitriou, Y.S. Raptis, E. Anastassakis, 15th General Conf. of the Condenced Matter Division of the European Physical Society, Baveno 1996, Italy.

17. Laser induced fluorescence as a diagnostic tool in atherosclerosis, N. Anastassopoulou, B. Arapoglou, P. Demakakos, M. Makropoulou, A. Paphiti, Y. S. Raptis, A. A. Serafetinides, Ninth International School on Quantum Electronics : Lasers - Physics and Applications, Varna, BULGARIA, September 1996, Proceedings SPIE, 3052, 394 (1996).

18. Interface roughness and confined LO phonon modes in (ZnSe)2(ZnS)11/GaAs(100) superlattices grown by PAVPE, V. V. Tishchenko, Y. S. Raptis, E. Anastassakis, Internationa Conference on Optical Diagnosis of Materials and Devices for Opto- Micro- and Quantum Electronics (OPTDIM-97), Kiev, UKRAINE, 13-15 May, 1997. SPIE Proceed. -“Int. Conf. on Optical Diagnostics of Materials and Devices for Opto-, Micro- and Quantum Electronics - OPTDIM’97”, 13-15 May 1997, Kyiv, Ukraine, p. 346-350.

19. Pressure-induced amorphization of germanium diselenide. Z. V. Popovic, Y. S. Raptis, E. Anastassakis, Z. Jaksic, 17th Internationsl Conference on Amorphous and Microcrystalline Semiconductors (ICAMS-17), Budapest HUNGARY, 25-29 August 1997.

20. Porous Silicon of Variable Porosity under high Hydrostatic Pressure : Raman and Photoluminescence Studies. D. Papadimitriou, Y. S. Raptis, A. G. Nassiopoulou and G. Kaltsas, 2nd Int. Workshop on Light Emitting Low Dimensional Si-structures, Lagonissi Attiki, June 1997.

21. Raman scattering study of pressure-induced phase transition in ZnAl2(1-X)Ga2xS4. V. V. Ursaki, I. I. Burlakov, I. M. Tiginyanu, Y. S. Raptis, E. Anastassakis, A. Anedda and A. Serpi, 11th Int. Conf. on Ternary and Multinary Compounds, ICTMC-11, Salford, 8-12, September 1997, Proceedings : Inst. Phys. Conf. Ser. No 152 : Section D: Optical and Electrical Properties, p. 605-608, IOP Publ. Ltd, 1998.

22. Raman Modes in Porous GaP under Hydrostatic Pressure,, I. M. Tiginyanu, V. V. Ursaki, Y. S. Raptis, V. Stergiou, E. Anastassakis, H. L. Hartnagel, A. Vogt, B. Prevot, C. Schwab, VIIIth Int. Conf. on High Pressure Semiconductor Physics, Thessaloniki, Greece, 9-13 August, 1998.

23. Raman study of ZnAl2(1-x)Ga2xS4 (x=0.1, 0.2, 0.4), under repeated Hydrostatic-Pressure Cycles,Y. S. Raptis, E. Anastassakis, V. V. Ursaki and I. M. Tiginyanu, XVIth Int. Conf. on Raman Spectroscopy, (ICORS-16), Cape Town, 1998, Ed. A.M. Heyns, John Wiley &Sons, Chichester 1998.

24. Raman study of ZnWO4 under variable Pressure and Temperature, A. Perakis, E. Sarantopoulou, Y. S. Raptis and C. Raptis, XVIth Int. Conf. on Raman Spectroscopy, (ICORS-16), Cape Town, 1998.

25. Parameters influencing the fratness and stability of capasitive pressure sensors fabricated with wafer bonding, D. Goustouridis, D. Tsoukalas, P. Normand, A. G. Kontos and E. Anastassakis,, Eurosensors XI, 1998.

26. Laser excited autofluorescence for discrimination of atherosclerosis, M. Makropoulou, H. Drakaki, N. Anastassopoulou, Y.S. Raptis. A. A. Serafetinides, A. Pafiti, B. Tsiligris, B. Arapoglou and P. Demakakos, Proceedings of Medical Applications of Lasers in Dermatology, Cardiology, Ophthalmology, and Dentistry II, 12-15 Sept. 1998, Stockholm, Sweden, SPIE, 3564, 68-75 (1999).

27. High-pressure raman study of SnGeS3, V.C.Stergiou, Y.S.Raptis, Z.V.Popovic, E.Anastassakis, XXXVII Meeting of the European High Pressure Research Group, Montpellier, 9-11 September 1999.

28. Phonon deformation potentials of CdTe, V. C. Stergiou, Y. S. Raptis, E. Sarantopoulou, E. Anastassakis, N. T. Pelekanos, A. Arnoult, S. Tatarenko, K. Saminadayar, XXXVII Meeting of the European High Pressure Research Group, Montpellier, 9-11 September 1999.

29. Raman Study of Elastically Strained Bulk and Layered Structures based on CdTe, V. C. Stergiou, Y. S. Raptis, E. Anastassakis, N. T. Pelekanos, A. Nahmani, J. Cibert, 9th High Pressure Semiconductor Physics, Sapporo, 24-28 September, 2000.

30. Influence of Ge Implantation on the Mechanical Properties of Polycrystalline Silicon Microstructures, S. Polymenakos, V. C. Stergiou, A. G. Kontos, Chr. Tsamis, Y. S. Raptis, D. Tsoukalas, 12th Micro Mechanics Europe, Cork, Ireland, 16 September 2001.

31. Strain Characterization, by Raman Spectroscopy, of Epitaxially Grown Superlattices. M. Siakavellas, A. G. Kontos and Y. S. Raptis, NATO Advanced Research Workshop On Atomistic Aspects of Epitaxial Growth, Corfu, 25-30 June, 2001. Published in Atomistic Aspects of Epitaxial Growth, 449-455 Ed. M. Kotrla et al., NATO Science Series, Kluwer Academic Publishers, Netherlands, 2002.

32. Temperarure and Composition Dependence of Raman Scattering and Photoluminescence Emission in CuGase2 Thin Films, C. Xue, D. Papadimitriou, Y. S. Raptis, N. Esser, W. Richter, S. Siebentritt, M. Ch. Luxsteiner, NATO Advanced Stusy Institute: Photovoltaic and Photoactive Materials, Properties Technology and Applications, Sozopol, Bulgaria, September 2001.

33. Structural and Optical Characterization of CuGaSe2 Thin Films under Excitation with Above and Below Band Gap Laser Light, C. Xue, D. Papadimitriou, N. Esser, W. Richter, S. Siebentritt, M. Ch. Luxsteiner, 2002 MRS Spring Meeting, San Francisco, California, April 2002.

34. Raman study of nitrogen-doped ZnSSe/GaAs epilayers, A.G. Kontos, Y.S. Raptis, M. Straßburg, U.W. Pohl, D. Bimberg, E-MRS 2002 Spring Meeting, Strasburg, June 18-21, 2002.

35. Raman study of b-Sr0.33V2O5 micro-crystals under high pressure, A. G. Kontos, D. Lampakis, Z. V. Popovic, Y. S. Raptis, E. Liarokapis, M. Isobe and Y. Ueda, 12th Int. Conf. on High Pressure Semiconductor Physics (HPSP-12), Barcelona, 31 July-3 August 2006.

36. High pressure Raman study of DyPO4 at room and low temperatures, A. G. Kontos, E. Stavrou, V. Malamos, Y. S. Raptis and C. Raptis, 12th Int. Conf. on High Pressure Semiconductor Physics (HPSP-12), Barcelona, 31 July-3 August 2006.

37. Laser annealing of implanted Silicon Carbide and Raman Characterization, I. Zergioti, A.G. Kontos, K. Zekentes, C. Boutopoulos, P. Terzis, Y.S. Raptis, SPIE International Conference on High Power Laser Ablation Sagebrush Inn & Conference Center Taos, New Mexico USA 7-12 May 2006, vol. 6261, pp. 626135 (2006).

38. Laser annealing of implanted Silicon Carbide and Raman Characterization, I. Zergioti, K. Zekentes, A.G. Kontos, Y.S. Raptis  poster presentation at E-MRS IUMRS ICEM 2006 Spring Meeting, Nice, France - May 29 – June 2, 2006 SYMPOSIUM. H.

39. Optical characterization of the structural changes induced in fused silica by ultraviolet femtosecond laser filaments I. Zergioti, D. G. Papazoglou, A.G. Kontos, Y.S. Raptis, S. Tzortzakis, oral presentation, E-MRS Symposium P, 28 May – 1 June 2007, Strasbourg France.

40. Raman studies (SERS) of Rhodamine 6G on random and periodic arrays of silver nanoparticles, I. Theodorakos, A. Gavriilelli, J. Tang, I. Raptis, A. Gerardino, Th. Speliotis, N. Papanikolaou, I. Zergioti, D. Tsoukalas, Y.S. Raptis, Emerging trends & Novel Materials in Photonics, Delphi, 7-9 September 2009.

41. Co-sensitization of nanostructured titania films by quantum dot chalcogenides and molecular dyes,  A.G.Kontos, V. Likodimos, E. Vassalou, I. Kapogianni, T. Stergiopoulos, Y.S. Raptis, C. Raptis, P. Falaras, 4th International Conference on Micro-Nanoelectronics, Nanotechnologies and MEMS, Athens, 12-15 December 2010.

42. SERS studies of rhodamine absorbed on Ag-NP gratings, developed by inert gas aggregation, P. Panagopoulou, N. Pantiskos, P. Photopoulos, J. Tang, D. Tsoukalas, Y. S. Raptis,  4th International Conference on Micro-Nanoelectronics, Nanotechnologies and MEMS, Athens, 12-15 December 2010.

43. Raman study of CVD-grown and laser-annealed Nanocrystalline Si for Soalr-Cell applications, Y. Theodorakos, I. Kalpyris, I. Zergioti, V. Vamvakas, K. Kotsovos, C. Sarigiannidis, Y. S. Raptis, 9th International Conference in Nanoscienses & Nanotechnologies, Thessaloniki 2012.

44. Photoluminescence study of Si nanocrystals embedded in SiO2 matrixes,  E. Verrelli, A. Kontos, Y. Raptis, P. Dimitrakis, P. Normand, D. Tsoukalas, 5th International Conference on Micro-Nanoelectronics, Nanotechnologies and MEMS, Heraklion, Crete, Greece, 7-10 October 2012,

45. Selective SERS of rhodamine-R6G on Ag-nanoparticles organized in linear arrays. M. Panagopoulou, P. Photopoulos, D. Tsoukalas, Y.S. Raptis, 9th International Conference in Nanoscienses & Nanotechnologies, Thessaloniki 2012.

46. Growth and characterization of thermochromic vanadium oxide thin films, M. Panagopoulou, Y. S. Raptis, D. Tsoukalas, poster presented at the 10th International Conference on Nanosciences & Nanotechnologies (NN13),2013, Thessaloniki.

47. Study of structural and optical properties of W- and Mg-co-sputtered VO2 thin layers, for thermochromic applications, M.Panagopoulou, E.Gagaoudakis, N.Boukos, E.Aperathitis, G.Kiriakidis, D.Tsoukalas, Y.S.Raptis, G. Iliadis, poster presented at the 2014 E-MRS Spring meeting, Lille, France.

48. The effect of buffer layer on the thermochromic properties of undoped and W-Mg-doped RF-sputtered VO2 thin films, M. Panagopoulou, E. Gagaoudakis, V. Kampylafka, G. Michail, N. Boukos, E. Aperathitis, G. Kiriakidis, D. Tsoukalas, Y.S. Raptis, poster presented at the 5th IS-TCM, 2014, Chania, Crete

49. RF sputtering of VO2 films – Tgrowth-, Substrate-, and Doping-Effects, E. Gagaoudakis, M. Panagopoulou, I. Kortidis, G. Michail, N. Vourdas, E. Aperathitis, D. Tsoukalas, Y. S. Raptis, G. Kiriakidis, oral presented at the 5th IS-TCM, 2014, Chania, Crete

50. A comparative study of two APCVD systems for the growth of thermochromic vanadium dioxide coatings, D. Louloudakis1, D. Vernardou, E. Spanakis, M. Panagopoulou, G. Raptis, G. Kiriakidis, N. Katsarakis, E. Koudoumas, oral presented at the 2015 MRS Spring meeting, San Francisco, California.

51. Effect of deposition temperature and amount of vanadium precursor on the thermochromic performance of VO2 coatings grown by atmospheric pressure CVD, D. Louloudakis, D. Vernardou, E. Spanakis, M. Panagopoulou, Y. Raptis, G. Kiriakidis, N. Katsarakis, E. Koudouma, poster presented at the 2015 E-MRS Spring meeting, Lille, France.

52. Effect of oxygen source on the properties of vanadium oxide coatings grown by atmospheric pressure CVD, D. Louloudakis, D. Vernardou, E. Spanakis, M. Panagopoulou, Y. Raptis, G. Kiriakidis, N. Katsarakis, E. Koudoumas, poster presented at the 2015 E-MRS Spring meeting, Lille, France.

53. Effect of O2 flow rate on the thermochromic performance of VO2 coatings grown by atmospheric pressure CVD, D. Louloudakis, D. Vernardou, E. Spanakis, S. Dokianakis, M. Panagopoulou, G. Raptis, E. Aperathitis, G. Kiriakidis, N. Katsarakis, and E. Koudoumas, has been accepted for oral presentation in EuroCVD 20, 2015, Switzerland

54. Raman and Photoluminescence investigation of CsSnI3 perovskite phase transitions, A. Kontos, S. Aggeli, E. Siranidi, M. Arfanis, M. Antoniadou, Y. Raptis, P. Trikalitis, P. Falaras, (oral), Int. Conf, Hybrid Organic Photovoltaics, Rome, May 2015.

AUTHOR: (Raptis Y*) Web of Science (July 1, 2016)

  • Results found:  73 
  • Sum of the Times Cited :1016
  • Citing Articles: 918
  • Average Citations per Item: 13.92
  • h-index: 18


Scopus (July 1, 2016) Raptis, Yannis S., [Author ID:7003976403]

  • Documents (82)

  • Citations (1001)

  • h-index (19)